inchange semiconductor isc product specification isc silicon npn power transistors BUP23BF/cf description collector-emitter sustaining voltage- : v ceo(sus) = 400v (min)-BUP23BF 450v (min)-bup23cf high switching speed applications designed for use in converters, inverters, switching regulators, motor control systems etc. absolute maximum ratings(t a =25 ) symbol parameter value unit BUP23BF 750 v ces collector- emitter voltage(v be = 0) bup23cf 850 v BUP23BF 400 v ceo collector-emitter voltage bup23cf 450 v v ebo emitter-base voltage 9 v i c collector current- continuous 15 a i cm collector current-peak 30 a i b b base current- continuous 6 a i bm base current-peak 9 a p c collector power dissipation @ t c =25 37 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.4 /w r th j-a thermal resistance,junction to ambient 35 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistors BUP23BF/cf electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUP23BF 400 v ceo(sus) collector-emitter sustaining voltage bup23cf i c = 100ma ; i b = 0;l= 25mh 450 v BUP23BF i c = 10a; i b = 1.33a 1.5 v ce (sat) collector-emitter saturation voltage bup23cf i c = 10a; i b = 1.67a 1.5 v BUP23BF i c = 10a; i b = 1.33a 1.5 v be (sat) base-emitter saturation voltage bup23cf i c = 10a; i b = 1.67a 1.5 v i ces collector cutoff current v ce = v cesmax ; v be = 0 v ce = v cesmax ; v be = 0;t j = 125 1 3 ma i ebo emitter cutoff current v eb = 9v ; i c = 0 10 ma h fe dc current gain i c = 1.5a ; v ce = 5v 25 switching times, resistive load t on turn-on time 1.0 s t stg storage time 4.5 s t f fall time for BUP23BF i c = 10a ;i b1 = -i b2 = 1.33a for bup23cf i c = 10a ;i b1 = -i b2 = 1.67a 0.7 s isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/
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